sot-89-3l plastic-encapsulate mosfets CJA9452 n-channel 20-v(d-s) mosfet description the advanced power mosfets provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low on- resistance and cost-effectiveness. maximum ratings (t a =25 unless otherwise noted) parameter symbol value units drain-source voltage v ds 20 continuous gate-source voltage v gs 1 2 v continuous drain current i d 4 a power dissipation p d 0.5 w thermal resistance from junction to ambient r ja 250 /w operating temperature t j 150 storage temperature t stg -55 ~+150 so t -89-3l 1. gate 2. drain 3. source 2 3 1 g d s 1 of 3 sales@zpsemi.com www.zpsemi.com CJA9452 d,nov,2011
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 20 v gate-body leakage i gss v ds =0v, v gs =1 2 v 100 na zero gate voltage drain current i dss v ds =20v, v gs =0v 1.0 a on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =0.25ma 0.70 1.50 v v gs =10v, i d =4a 0.038 v gs =4.5v, i d =4a 0.05 static drain-source on-resistance (note 1) r ds(on) v gs =2.5v, i d =3a 0.08 ? forward transconductance (note 1) g fs v ds =5v, i d =3a 3 s dynamic characteristics (note 2) input capacitance c iss 570 output capacitance c oss 80 reverse transfer capacitance c rss v ds =20v,v gs =0v, f=1mhz 65 pf switching characteristics turn-on delay time (note 1,2) t d(on) 8 rise time (note 2) t r 9 turn-off delay time (note 2) t d(off) 13 fall time (note 2) t f v gs =5v, v ds =10v, i d =1a, r gen =3.3 ? , r d =10 ? 3 ns drain-source body diode characteristics body diode forward voltage (note 1) v sd i s =1a, v gs = 0v 1.3 v no tes: 1. pulse test ; pulse width 300s, duty cycle 2%. 2. these parameters have no way to verify. 2 of 3 sales@zpsemi.com www.zpsemi.com CJA9452 d,nov,2011
012345 0 5 10 15 20 024681 0 0 20 40 60 80 024681 0 0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 01234 0 5 10 15 20 25 50 75 100 125 0.5 0.6 0.7 0.8 v gs =4.5v,4.0v,3.5v,3.0v 2.5v 2.0v v gs =1.5v t a =25 pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) i d =4a t a =25 pulsed v gs ?? r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) v gs =2.5v v gs =4.5v v gs =10v i d ?? r ds(on) t a =25 pulsed on-resistance r ds(on) (m ) drain current i d (a) v sd i s ?? t a =25 pulsed source current i s (a) source to drain voltage v sd (v) v ds =5v t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) threshold voltage i d =250ua threshold voltage v th (v) junction temperature t j ( ) 3 of 3 sales@zpsemi.com www.zpsemi.com CJA9452 d,nov,2011
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